{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620592","patent":{"patent_number":"US-9620592","title":"Doped zinc oxide and n-doping to reduce junction leakage","assignee":null,"inventors":[],"filing_date":"2015-02-12T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped III-V material. A contact interface layer is formed on the n-doped layer. The contact interface layer includes a II-VI material. A contact metal is formed on the contact interface layer to form an electronic device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Doped zinc oxide and n-doping to reduce junction leakage","description":"A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-doped layer is formed on the p-doped layer, the n-doped layer including a doped ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620592","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620592","citation_suggestion":"Patentable. \"Doped zinc oxide and n-doping to reduce junction leakage\" (US-9620592). https://patentable.app/patents/US-9620592","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620592","json":"https://patentable.app/api/llm-context/US-9620592","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:36:45.098Z"}