{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620599","patent":{"patent_number":"US-9620599","title":"GaN-based semiconductor transistor","assignee":null,"inventors":[],"filing_date":"2015-12-16T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A semiconductor device according an embodiment includes a GaN layer, a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than the GaN layer, a source electrode electrically connected to the GaN-based semiconductor layer, a drain electrode electrically connected to the GaN-based semiconductor layer, a gate electrode provided in the GaN-based semiconductor layer between the source electrode and the drain electrode, and a gate insulating film provided at least between the GaN layer and the gate electrode, the gate insulating film including a first insulating film and a second insulating film, the first insulating film provided on the GaN layer, the first insulating film having a thickness equal to or greater than 0.2 nm and less than 2 nm, the first insulating film including nitrogen, the second insulating film provided between the first insulating film and the gate electrode, the second insulating film including oxygen."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"GaN-based semiconductor transistor","description":"A semiconductor device according an embodiment includes a GaN layer, a GaN-based semiconductor layer provided on the GaN layer and having a wider band gap than the GaN layer, a source electrode electr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620599","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620599","citation_suggestion":"Patentable. \"GaN-based semiconductor transistor\" (US-9620599). https://patentable.app/patents/US-9620599","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620599","json":"https://patentable.app/api/llm-context/US-9620599","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:37:42.725Z"}