{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620611","patent":{"patent_number":"US-9620611","title":"MIS contact structure with metal oxide conductor","assignee":null,"inventors":[],"filing_date":"2016-06-17T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H04L","H04L"],"num_claims":19,"abstract":"An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10−5-10−7 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm−3 and less than approximately 10−8 Ω-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm−3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MIS contact structure with metal oxide conductor","description":"An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness dispose","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620611","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620611","citation_suggestion":"Patentable. \"MIS contact structure with metal oxide conductor\" (US-9620611). https://patentable.app/patents/US-9620611","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620611","json":"https://patentable.app/api/llm-context/US-9620611","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:05:58.418Z"}