{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620615","patent":{"patent_number":"US-9620615","title":"IGBT manufacturing method","assignee":null,"inventors":[],"filing_date":"2014-07-29T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"IGBT manufacturing method","description":"An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620615","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620615","citation_suggestion":"Patentable. \"IGBT manufacturing method\" (US-9620615). https://patentable.app/patents/US-9620615","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620615","json":"https://patentable.app/api/llm-context/US-9620615","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:34:17.365Z"}