{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620617","patent":{"patent_number":"US-9620617","title":"Structure and method for reducing substrate parasitics in semiconductor on insulator technology","assignee":null,"inventors":[],"filing_date":"2015-08-14T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A structure having improved electrical signal isolation and linearity is disclosed. The structure includes a buried oxide (“BOX”) layer over a bulk semiconductor layer, a device layer over the buried oxide layer, a compensation implant region near an interface of the buried oxide layer and the bulk semiconductor layer, wherein the compensation implant region is configured to substantially eliminate a parasitic conduction layer near the buried oxide layer. The compensation implant region has a doping concentration of at least one order of magnitude higher than a doping concentration of the bulk semiconductor layer. The structure includes a deep trench extending through the device layer and the buried oxide layer, and a damaged implant region in the bulk semiconductor layer near the deep trench. The structure also includes at least one transistor in the device layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for reducing substrate parasitics in semiconductor on insulator technology","description":"A structure having improved electrical signal isolation and linearity is disclosed. The structure includes a buried oxide (“BOX”) layer over a bulk semiconductor layer, a device layer over the buried ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620617","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620617","citation_suggestion":"Patentable. \"Structure and method for reducing substrate parasitics in semiconductor on insulator technology\" (US-9620617). https://patentable.app/patents/US-9620617","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620617","json":"https://patentable.app/api/llm-context/US-9620617","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:27.713Z"}