{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620627","patent":{"patent_number":"US-9620627","title":"Field-effect transistors having black phosphorus channel and methods of making the same","assignee":null,"inventors":[],"filing_date":"2015-12-15T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A field-effect transistor (FET) includes a black phosphorus (BP) layer over a substrate. The BP layer includes channel, source, and drain regions. The FET further includes a passivation layer over and in direct contact with the BP layer. The passivation layer provides first and second openings over the source and drain regions respectively. The FET further includes source and drain contacts in direct contact with the source and drain regions through the first and second openings. The FET further includes a gate electrode over the channel region. In an embodiment, the passivation layer further includes a third opening over the channel region and the FET further includes a gate dielectric layer in direct contact with the channel region through the third opening. Methods of making the FET are also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field-effect transistors having black phosphorus channel and methods of making the same","description":"A field-effect transistor (FET) includes a black phosphorus (BP) layer over a substrate. The BP layer includes channel, source, and drain regions. The FET further includes a passivation layer over and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620627","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620627","citation_suggestion":"Patentable. \"Field-effect transistors having black phosphorus channel and methods of making the same\" (US-9620627). https://patentable.app/patents/US-9620627","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620627","json":"https://patentable.app/api/llm-context/US-9620627","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:37:51.631Z"}