{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620629","patent":{"patent_number":"US-9620629","title":"Semiconductor device and manufacturing method for semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-03-25T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device including: a P-type base region provided; an N-type emitter region provided inside the P-type base region; a P-type collector region that is provided on the surface layer portion of the N-type semiconductor layer and is separated from the P-type base region; a gate insulating film that is provided on the surface of the N-type semiconductor layer, and that contacts the P-type base region and the N-type emitter region; a gate electrode on the gate insulating film; a pillar shaped structure provided inside the N-type semiconductor layer between the P-type base region and the P-type collector region, wherein one end of the pillar shaped structure is connected to an N-type semiconductor that extends to the surface layer portion of the N-type semiconductor layer, and the pillar shaped structure includes an insulator extending in a depth direction of the N-type semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method for semiconductor device","description":"A semiconductor device including: a P-type base region provided; an N-type emitter region provided inside the P-type base region; a P-type collector region that is provided on the surface layer portio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620629","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620629","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method for semiconductor device\" (US-9620629). https://patentable.app/patents/US-9620629","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620629","json":"https://patentable.app/api/llm-context/US-9620629","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:47:23.852Z"}