{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620630","patent":{"patent_number":"US-9620630","title":"Injection control in semiconductor power devices","assignee":null,"inventors":[],"filing_date":"2016-03-16T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":30,"abstract":"Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conductivity type. A semiconductive first buffer layer of the first conductivity type formed above the substrate. A doping concentration of the first buffer layer is greater than a doping concentration of the substrate. A second buffer layer of the second conductivity type formed above the first buffer layer. An epitaxial layer of the second conductivity type formed above the second buffer layer. One or more heavily doped regions of the second conductivity type are formed through portions of the first buffer layer from the second buffer layer and into corresponding portions of the substrate. This abstract is provided with the understanding that it will not be used to interpret or limit the scope or meaning of the claims."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Injection control in semiconductor power devices","description":"Semiconductor power devices can be formed on substrate structure having a lightly doped semiconductor substrate of a first conductivity type or a second conductivity type opposite to the first conduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620630","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620630","citation_suggestion":"Patentable. \"Injection control in semiconductor power devices\" (US-9620630). https://patentable.app/patents/US-9620630","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620630","json":"https://patentable.app/api/llm-context/US-9620630","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:08:55.719Z"}