{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9620643","patent":{"patent_number":"US-9620643","title":"Reducing parasitic capacitance and resistance in finFET","assignee":null,"inventors":[],"filing_date":"2015-01-27T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. The method can include providing a substrate. The method can include forming a fin on the substrate. The method can include forming a dummy gate on the fin and the substrate. The method can include etching portions of the fin not located below the dummy gate. The method can include epitaxially forming doped source and drain regions on the exposed sides of the fin. The method can include forming an insulative spacer on exposed sides of the dummy gate. The method can include forming one or more metal regions adjacent to the doped source and drain regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reducing parasitic capacitance and resistance in finFET","description":"Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. The method can include providing a substrate. The method can include forming a fin on ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9620643","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9620643","citation_suggestion":"Patentable. \"Reducing parasitic capacitance and resistance in finFET\" (US-9620643). https://patentable.app/patents/US-9620643","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9620643","json":"https://patentable.app/api/llm-context/US-9620643","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:58:58.158Z"}