{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9621133","patent":{"patent_number":"US-9621133","title":"Method of operating a semiconductor device having an IGBT and desaturation channel structure","assignee":null,"inventors":[],"filing_date":"2015-04-06T00:00:00.000Z","publication_date":"2017-04-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A semiconductor device is operated by applying a gate voltage with a first value to a gate electrode terminal such that current flows through the IGBT between first and second electrode terminals and current flow through a desaturation channel is substantially blocked. A gate voltage with a second value is applied to the gate electrode terminal the absolute value of which is lower than that of the first value, such that current flows through the IGBT between the first and second electrode terminals and charge carriers flow as a desaturating current through the desaturation channel to the first electrode terminal. A gate voltage with a third value is applied to the gate electrode terminal, the absolute value of which is lower than that of the first and second values, such that current flow through the IGBT between the first and second electrode terminals is substantially blocked."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of operating a semiconductor device having an IGBT and desaturation channel structure","description":"A semiconductor device is operated by applying a gate voltage with a first value to a gate electrode terminal such that current flows through the IGBT between first and second electrode terminals and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9621133","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9621133","citation_suggestion":"Patentable. \"Method of operating a semiconductor device having an IGBT and desaturation channel structure\" (US-9621133). https://patentable.app/patents/US-9621133","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9621133","json":"https://patentable.app/api/llm-context/US-9621133","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:25:30.725Z"}