{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627024","patent":{"patent_number":"US-9627024","title":"Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory","assignee":null,"inventors":[],"filing_date":"2014-09-16T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":17,"abstract":"A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagnetic reference layer, includes applying a first read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a first voltage generated by the memory cell in response to the first read current, generating a magnetic field adjacent to the memory cell, the magnetic field having a second magnetization orientation that is not parallel to the first magnetization orientation, while the magnetic field is being generated, applying a second read current from the ferromagnetic free layer to the ferromagnetic reference layer and storing a second voltage generated by the memory cell in response to the second read current, and determining a state of the memory cell based on the first voltage and the second voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory","description":"A method of reading a memory cell of a magneto-resistive random access memory device, wherein the memory cell has a ferromagnetic free layer having a first magnetization orientation and a ferromagneti","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627024","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627024","citation_suggestion":"Patentable. \"Magnetic-assisted nondestructive self-reference sensing method for spin-transfer torque random access memory\" (US-9627024). https://patentable.app/patents/US-9627024","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627024","json":"https://patentable.app/api/llm-context/US-9627024","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:48:28.177Z"}