{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627042","patent":{"patent_number":"US-9627042","title":"Static random access memory cell having improved write margin for use in ultra-low power application","assignee":null,"inventors":[],"filing_date":"2013-12-30T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":21,"abstract":"A static random access memory (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes; read access switches electrically coupled between a read bit line and the two storage nodes; write access switches electrically coupled between write bit lines and two storage nodes; and supply switches electrically coupled between a supply voltage and the pair of inverters and operable, in response to a signal on at least one of the write bit lines, to selectively connect the supply voltage to at least one of the inverters in the pair of inverters. During a write operation, the supply switches operate to cut off the supply voltage to the inverter in the pair of inverters having a charged state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Static random access memory cell having improved write margin for use in ultra-low power application","description":"A static random access memory (SRAM) cell is provided with improved write margin. The SRAM cell includes: a pair of inverters cross coupled to each other and forming two storage nodes; read access swi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627042","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627042","citation_suggestion":"Patentable. \"Static random access memory cell having improved write margin for use in ultra-low power application\" (US-9627042). https://patentable.app/patents/US-9627042","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627042","json":"https://patentable.app/api/llm-context/US-9627042","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:36.279Z"}