{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627049","patent":{"patent_number":"US-9627049","title":"Reprogram without erase using capacity in multi-level NAND cells","assignee":null,"inventors":[],"filing_date":"2016-09-02T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":22,"abstract":"Inventive aspects include a memory device having one or more memory pages including a plurality of memory cells each having a plurality of programmable state levels. The memory device includes a memory control logic section including a program logic section and page-level reprogram state metadata. The program logic section may program the plurality of memory cells dependent on the page-level reprogram state metadata. The program logic section may program a first state level, a second state level, and a third state level of each of the memory cells in consecutive programming operations of the plurality of memory cells dependent on the page-level reprogram state metadata, without requiring any erase operations or read operations during or between the programming operations."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reprogram without erase using capacity in multi-level NAND cells","description":"Inventive aspects include a memory device having one or more memory pages including a plurality of memory cells each having a plurality of programmable state levels. The memory device includes a memor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627049","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627049","citation_suggestion":"Patentable. \"Reprogram without erase using capacity in multi-level NAND cells\" (US-9627049). https://patentable.app/patents/US-9627049","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627049","json":"https://patentable.app/api/llm-context/US-9627049","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:36.452Z"}