{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627214","patent":{"patent_number":"US-9627214","title":"Stratified gate dielectric stack for gate dielectric leakage reduction","assignee":null,"inventors":[],"filing_date":"2016-07-01T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a band-gap-disrupting dielectric comprising a dielectric material having a different band gap than the first high-k dielectric material, and a second high-k gate dielectric comprising a second high-k dielectric material. The band-gap-disrupting dielectric includes at least one contiguous atomic layer of the dielectric material. Thus, the stratified gate dielectric stack includes a first atomic interface between the first high-k gate dielectric and the band-gap-disrupting dielectric, and a second atomic interface between the second high-k gate dielectric and the band-gap-disrupting dielectric that is spaced from the first atomic interface by at least one continuous atomic layer of the dielectric material of the band-gap-disrupting dielectric. The insertion of the band-gap disrupting dielectric results in lower gate leakage without resulting in any substantial changes in the threshold voltage characteristics and effective oxide thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stratified gate dielectric stack for gate dielectric leakage reduction","description":"A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a band-gap-disrupting dielectric comprising a diele","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627214","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627214","citation_suggestion":"Patentable. \"Stratified gate dielectric stack for gate dielectric leakage reduction\" (US-9627214). https://patentable.app/patents/US-9627214","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627214","json":"https://patentable.app/api/llm-context/US-9627214","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:45:39.709Z"}