{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627247","patent":{"patent_number":"US-9627247","title":"Semiconductor device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-06-03T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"Provided is a method of fabricating a semiconductor device, including the following. A first material layer, a second material layer and a mask layer are formed on a substrate. A portion of the second material layer is removed by performing a first etching process with the mask layer as a mask, so as to expose the first material layer and form a first pattern layer and a second pattern layer. A portion of the first material layer is removed by performing a second etching process with the mask layer as a mask, so as to expose a portion of the substrate. A portion of the substrate is removed by performing a third etching process with the mask layer as a mask, so as to form first trenches and second trenches. Sidewalls of the second trenches and a surface of the substrate form at least two different angles."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of fabricating the same","description":"Provided is a method of fabricating a semiconductor device, including the following. A first material layer, a second material layer and a mask layer are formed on a substrate. A portion of the second","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627247","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627247","citation_suggestion":"Patentable. \"Semiconductor device and method of fabricating the same\" (US-9627247). https://patentable.app/patents/US-9627247","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627247","json":"https://patentable.app/api/llm-context/US-9627247","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:21:44.680Z"}