{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627248","patent":{"patent_number":"US-9627248","title":"Insulated gate type semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-02-05T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":4,"abstract":"An insulating gate type semiconductor device being capable of easily depleting an outer periphery region is provided. The insulating gate type semiconductor device includes: first to fourth outer periphery trenches formed in a front surface of a semiconductor substrate; insulating layers located in the outer periphery trenches; fifth semiconductor regions being of a second conductive type and formed in ranges exposed to bottom surfaces of the outer periphery trenches; and a connection region connecting the fifth semiconductor region exposed to the bottom surface of the second outer periphery trench to the fifth semiconductor region exposed to the bottom surface of the third outer periphery trench. A clearance between the second and third outer periphery trenches is wider than each of a clearance between the first and second outer periphery trenches and a clearance between the third and fourth outer periphery trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate type semiconductor device","description":"An insulating gate type semiconductor device being capable of easily depleting an outer periphery region is provided. The insulating gate type semiconductor device includes: first to fourth outer peri","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627248","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627248","citation_suggestion":"Patentable. \"Insulated gate type semiconductor device\" (US-9627248). https://patentable.app/patents/US-9627248","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627248","json":"https://patentable.app/api/llm-context/US-9627248","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:21:34.414Z"}