{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627258","patent":{"patent_number":"US-9627258","title":"Method of forming a contact","assignee":null,"inventors":[],"filing_date":"2016-06-15T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a first gate structure in a dielectric layer over a substrate, wherein the first gate structure includes a first gate stack and spacers along sidewalls of the first gate stack; recessing the first gate stack to form a first trench defined by the spacers, wherein upper portions of the spacers are exposed within the first trench; forming a first capping layer in the first trench, wherein the first capping layer has a first portion disposed along sidewalls of the upper portions of the spacers and a second portion disposed over the recessed first gate stack; applying a first implantation to convert the second portion of the first capping layer into a second capping layer; selectively removing the first portion of the capping layer to expose the upper portions of the spacers; and selectively removing the upper portions of the spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a contact","description":"A method includes forming a first gate structure in a dielectric layer over a substrate, wherein the first gate structure includes a first gate stack and spacers along sidewalls of the first gate stac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627258","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627258","citation_suggestion":"Patentable. \"Method of forming a contact\" (US-9627258). https://patentable.app/patents/US-9627258","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627258","json":"https://patentable.app/api/llm-context/US-9627258","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:57.594Z"}