{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627265","patent":{"patent_number":"US-9627265","title":"Apparatus and method for power MOS transistor","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method comprises providing a substrate with a second conductivity type, growing a first epitaxial layer having the second conductivity type, growing a second epitaxial layer having a first conductivity type, forming a trench in the first epitaxial layer and the second epitaxial layer, forming a gate electrode in the trench, applying an ion implantation process using first gate electrode as an ion implantation mask to form a drain-drift region, forming a field plate in the trench, forming a drain region in the second epitaxial layer, wherein the drain region has the first conductivity type and forming a source region in the first epitaxial layer, wherein the source region has the first conductivity type, and wherein the source region is electrically coupled to the field plate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatus and method for power MOS transistor","description":"A method comprises providing a substrate with a second conductivity type, growing a first epitaxial layer having the second conductivity type, growing a second epitaxial layer having a first conductiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627265","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627265","citation_suggestion":"Patentable. \"Apparatus and method for power MOS transistor\" (US-9627265). https://patentable.app/patents/US-9627265","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627265","json":"https://patentable.app/api/llm-context/US-9627265","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:19:21.200Z"}