{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627278","patent":{"patent_number":"US-9627278","title":"Method of source/drain height control in dual epi finFET formation","assignee":null,"inventors":[],"filing_date":"2015-06-16T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"A method of forming field effect transistors (FETs), and forming integrated circuit (IC) chip including the FETs. Gates are formed on said semiconductor fins to define multi fin field effect transistors (FinFETs). Dielectric sidewalls on fins protect the sidewalls while the surface is damaged intentionally, e.g., with an implant that leaves source/drain junctions undisturbed. After removing the dielectric sidewalls semiconductor material is grown epitaxially on the sidewalls with the damage retarding growth on the surface. The epi-growth bridges between fins in the same FET. After the damage is repaired, chip processing continues normally."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of source/drain height control in dual epi finFET formation","description":"A method of forming field effect transistors (FETs), and forming integrated circuit (IC) chip including the FETs. Gates are formed on said semiconductor fins to define multi fin field effect transisto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627278","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627278","citation_suggestion":"Patentable. \"Method of source/drain height control in dual epi finFET formation\" (US-9627278). https://patentable.app/patents/US-9627278","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627278","json":"https://patentable.app/api/llm-context/US-9627278","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:48:13.955Z"}