{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627319","patent":{"patent_number":"US-9627319","title":"Semiconductor device and semiconductor device manufacturing method using patterning and dry etching","assignee":null,"inventors":[],"filing_date":"2015-12-14T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, patterning a resist on the hard mask layer, patterning the hard mask layer by dry-etching the hard mask layer with the patterned resist as a mask, cleaning a surface of the barrier metal layer with a cleaning solution after the patterning the hard mask layer, and dry-etching the multilayered film with the patterned hard mask layer as a mask after the cleaning the surface of the barrier metal layer. In the patterning the hard mask layer, dry etching is performed with a ratio of a flow rate of an oxidizing gas to a total flow rate of a process gas at less than 1% in a state in which the barrier metal layer is exposed to the process gas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method using patterning and dry etching","description":"A method includes forming a multilayered film including a conductive layer mainly containing aluminum, and a barrier metal layer formed thereon, forming a hard mask layer on the barrier metal layer, p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627319","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627319","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method using patterning and dry etching\" (US-9627319). https://patentable.app/patents/US-9627319","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627319","json":"https://patentable.app/api/llm-context/US-9627319","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:19:45.804Z"}