{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627378","patent":{"patent_number":"US-9627378","title":"Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding","assignee":null,"inventors":[],"filing_date":"2015-06-30T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"In one aspect, a method of forming finFET devices is provided which includes patterning fins in a wafer; forming dummy gates over the fins; forming spacers on opposite sides of the dummy gates; depositing a gap fill oxide on the wafer, filling any gaps between the spacers; removing the dummy gates forming gate trenches; trimming the fins within the gate trenches such that a width of the fins within the gate trenches is less than the width of the fins under the spacers adjacent to the gate trenches, wherein u-shaped grooves are formed in sides of the fins within the gate trenches; and forming replacement gate stacks in the gate trenches, wherein portions of the fins adjacent to the replacement gate stacks serve as source and drain regions of the finFET devices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding","description":"In one aspect, a method of forming finFET devices is provided which includes patterning fins in a wafer; forming dummy gates over the fins; forming spacers on opposite sides of the dummy gates; deposi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627378","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627378","citation_suggestion":"Patentable. \"Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding\" (US-9627378). https://patentable.app/patents/US-9627378","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627378","json":"https://patentable.app/api/llm-context/US-9627378","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:30:02.432Z"}