{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627381","patent":{"patent_number":"US-9627381","title":"Confined N-well for SiGe strain relaxed buffer structures","assignee":null,"inventors":[],"filing_date":"2015-12-15T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"Techniques for effectively confining n-well dopants during fabrication of relaxed SiGe on SRB devices are provided. In one aspect, a method for forming a semiconductor device includes the steps of: forming a SiGe stress relief buffer layer on a substrate; growing a bottom confinement layer on the stress relief buffer layer; growing a SiGe layer on the bottom confinement layer; growing a top confinement layer on the SiGe layer; forming STI regions extending through the top confinement layer, through the SiGe layer, and at least down to the bottom confinement layer, wherein the STI regions define at least one active area in the SiGe layer; and implanting at least one well dopant into the at least one active area which is confined to the at least one active area by the top confinement layer, the bottom confinement layer, and the STI regions. A semiconductor device is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Confined N-well for SiGe strain relaxed buffer structures","description":"Techniques for effectively confining n-well dopants during fabrication of relaxed SiGe on SRB devices are provided. In one aspect, a method for forming a semiconductor device includes the steps of: fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627381","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627381","citation_suggestion":"Patentable. \"Confined N-well for SiGe strain relaxed buffer structures\" (US-9627381). https://patentable.app/patents/US-9627381","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627381","json":"https://patentable.app/api/llm-context/US-9627381","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:03.818Z"}