{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627383","patent":{"patent_number":"US-9627383","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-09-17T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A semiconductor device includes a first MOS transistor and a second MOS transistor of a second conductivity type. The first MOS transistor includes a first main electrode connected to a first potential and a second main electrode connected to a second potential. The second MOS transistor includes a first main electrode connected to a control electrode of the first MOS transistor and a second main electrode connected to the second potential. The control electrodes of the first and second MOS transistors are connected in common. The first and second MOS transistors are formed on a common wide bandgap semiconductor substrate. In the first MOS transistor, a main current flows in a direction perpendicular to a main surface of the wide bandgap semiconductor substrate. In the second MOS transistor, a main current flows in a direction parallel to the main surface of the wide bandgap semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"A semiconductor device includes a first MOS transistor and a second MOS transistor of a second conductivity type. The first MOS transistor includes a first main electrode connected to a first potentia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627383","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627383","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9627383). https://patentable.app/patents/US-9627383","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627383","json":"https://patentable.app/api/llm-context/US-9627383","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:02.476Z"}