{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627397","patent":{"patent_number":"US-9627397","title":"Memory device and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-07-20T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A memory device includes a semiconductor substrate, an isolation layer disposed on the semiconductor substrate, a first conductive layer disposed on the isolation layer, at least one contact plug passing through the isolation layer and electrically contacting the semiconductor substrate with the first conductive layer, a plurality of insulating layers disposed on the first conductive layer, a plurality of second conductive layers alternatively stacked with the insulating layers and insulated from the first conductive layer, a channel layer disposed on at least one sidewall of a first through opening and electrically contacting to the contact plug, wherein the first through opening passes through the insulating layers and the second conductive layers to expose the contact plug, and a memory layer disposed between the channel layer and the second conductive layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device and method for fabricating the same","description":"A memory device includes a semiconductor substrate, an isolation layer disposed on the semiconductor substrate, a first conductive layer disposed on the isolation layer, at least one contact plug pass","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627397","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627397","citation_suggestion":"Patentable. \"Memory device and method for fabricating the same\" (US-9627397). https://patentable.app/patents/US-9627397","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627397","json":"https://patentable.app/api/llm-context/US-9627397","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:04:27.405Z"}