{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627403","patent":{"patent_number":"US-9627403","title":"Multilevel memory stack structure employing support pillar structures","assignee":null,"inventors":[],"filing_date":"2015-09-23T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":25,"abstract":"A first stack of alternating layers including first electrically insulating layers and first sacrificial material layers is formed with first stepped surfaces. First memory openings can be formed in a device region outside of the first stepped surfaces, and first support openings can be formed through the first stepped surfaces. The first memory openings and the first support openings can be filled with a sacrificial fill material. A second stack of alternating layers including second electrically insulating layers and second sacrificial material layers can be formed over the first stack. Inter-stack memory openings including the first memory openings can be formed in the device region, and inter-stack support openings including the first support openings can be formed in a steppes surface region. Memory stack structures and support pillar structure are simultaneously formed in the inter-stack memory openings and the inter-stack support openings, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilevel memory stack structure employing support pillar structures","description":"A first stack of alternating layers including first electrically insulating layers and first sacrificial material layers is formed with first stepped surfaces. First memory openings can be formed in a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627403","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627403","citation_suggestion":"Patentable. \"Multilevel memory stack structure employing support pillar structures\" (US-9627403). https://patentable.app/patents/US-9627403","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627403","json":"https://patentable.app/api/llm-context/US-9627403","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:03:55.816Z"}