{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627411","patent":{"patent_number":"US-9627411","title":"Three-dimensional transistor and methods of manufacturing thereof","assignee":null,"inventors":[],"filing_date":"2015-06-05T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Three-dimensional (3D) transistors and methods of manufacturing thereof include a first semiconductor fin extending over a substrate. The first semiconductor fin has a vertical recess extending from a first sidewall of the first semiconductor fin toward a second sidewall of the first semiconductor fin opposite the first sidewall. A distance between two opposing sidewalls of the vertical recess decreases as the vertical recess extends toward the second sidewall of the first semiconductor fin. The device further includes a vertically recessed channel region between the second sidewall of the first semiconductor fin and a bottom of the vertical recess, source/drain (S/D) regions at opposite ends of the vertically recessed channel region, and a gate stack over the vertically recessed channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional transistor and methods of manufacturing thereof","description":"Three-dimensional (3D) transistors and methods of manufacturing thereof include a first semiconductor fin extending over a substrate. The first semiconductor fin has a vertical recess extending from a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627411","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627411","citation_suggestion":"Patentable. \"Three-dimensional transistor and methods of manufacturing thereof\" (US-9627411). https://patentable.app/patents/US-9627411","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627411","json":"https://patentable.app/api/llm-context/US-9627411","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:55.194Z"}