{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627433","patent":{"patent_number":"US-9627433","title":"Method of manufacturing junction field effect transistor","assignee":null,"inventors":[],"filing_date":"2015-08-26T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of manufacturing a junction field effect transistor having a channel region disposed in a semiconductor substrate, deeper than one of a source region and a drain region, the method includes a first step of forming a first mask having a first opening portion over the semiconductor substrate in which a first semiconductor region of a first conductivity type is disposed, a second step of forming a second semiconductor region of a second conductivity type defined as the channel region, in the first semiconductor region by implantation of ions of second conductivity type opposite to the first conductivity type using the first mask, and a third step of forming a third semiconductor region of the second conductivity type defined as the one of the source region and the drain region, by implantation of ions of the second conductivity type, using the first mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing junction field effect transistor","description":"A method of manufacturing a junction field effect transistor having a channel region disposed in a semiconductor substrate, deeper than one of a source region and a drain region, the method includes a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627433","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627433","citation_suggestion":"Patentable. \"Method of manufacturing junction field effect transistor\" (US-9627433). https://patentable.app/patents/US-9627433","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627433","json":"https://patentable.app/api/llm-context/US-9627433","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:50:00.446Z"}