{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627468","patent":{"patent_number":"US-9627468","title":"Capacitor structure and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-08-14T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductive layer is located in the dielectric layer. The cup-shaped capacitor penetrates through the first conductive layer and is located in the dielectric layer. The cup-shaped capacitor includes a bottom electrode, a capacitor dielectric layer, and a top electrode. Two sidewalls of the bottom electrode are electrically connected to the first conductive layer. The capacitor dielectric layer covers a surface of the bottom electrode. The top electrode covers a surface of the capacitor dielectric layer. The capacitor dielectric layer is located between the top electrode and the bottom electrode. A top surface of the bottom electrode is lower than a top surface of the top electrode. Also the invention provides a method of manufacturing the capacitor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capacitor structure and method of manufacturing the same","description":"Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is located on the substrate. The first conductiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627468","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627468","citation_suggestion":"Patentable. \"Capacitor structure and method of manufacturing the same\" (US-9627468). https://patentable.app/patents/US-9627468","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627468","json":"https://patentable.app/api/llm-context/US-9627468","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:33.340Z"}