{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627487","patent":{"patent_number":"US-9627487","title":"Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-03-05T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A silicon carbide substrate has first to third semiconductor layers. The first and third semiconductor layers have a first conductivity type, and the second semiconductor layer has a second conductivity type. A trench has a bottom surface and first to third side surfaces, the bottom surface being constituted of the first semiconductor layer, the first to third side surfaces being respectively constituted of the first to third semiconductor layers. A gate insulating film having a bottom portion and a side wall portion is provided on the trench. The bottom portion has a minimum thickness d0. A portion of the side wall portion on the second side surface has a minimum thickness d1. A portion, connected to the bottom portion, of the side wall portion on the first side surface has a thickness d2. Moreover, d2>d1 and d2>d0 are satisfied."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device","description":"A silicon carbide substrate has first to third semiconductor layers. The first and third semiconductor layers have a first conductivity type, and the second semiconductor layer has a second conductivi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627487","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627487","citation_suggestion":"Patentable. \"Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device\" (US-9627487). https://patentable.app/patents/US-9627487","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627487","json":"https://patentable.app/api/llm-context/US-9627487","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:42.059Z"}