{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627494","patent":{"patent_number":"US-9627494","title":"Pillar-shaped semiconductor device and production method therefor","assignee":null,"inventors":[],"filing_date":"2015-12-21T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"A SiO2 layer is formed at a middle of a Si pillar. An opening is formed in a gate insulating layer and a gate conductor layer in a peripheral portion that includes a side surface of the SiO2 layer. Two stacks of layers, each stack being constituted by a Ni layer, a poly-Si layer containing a donor or acceptor impurity atom, and a SiO2 layer, are formed in a peripheral portion of the opening, and heat treatment is performed to silicidate the poly-Si layers into NiSi layers. The NiSi layers protrude and come into contact with the side surface of the Si pillar by silicidation, and a donor or acceptor impurity atom diffuses from the NiSi layers into the Si pillar. Thus an N+ region and a P+ region serving as a source and a drain of surrounding gate MOS transistors are respectively formed above and under the SiO2 layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pillar-shaped semiconductor device and production method therefor","description":"A SiO2 layer is formed at a middle of a Si pillar. An opening is formed in a gate insulating layer and a gate conductor layer in a peripheral portion that includes a side surface of the SiO2 layer. Tw","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627494","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627494","citation_suggestion":"Patentable. \"Pillar-shaped semiconductor device and production method therefor\" (US-9627494). https://patentable.app/patents/US-9627494","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627494","json":"https://patentable.app/api/llm-context/US-9627494","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:11:01.983Z"}