{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627498","patent":{"patent_number":"US-9627498","title":"Contact structure for thin film semiconductor","assignee":null,"inventors":[],"filing_date":"2015-05-20T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method is described for forming a circuit that comprises forming a layer of semiconductor material on the substrate and an interlayer conductor contacting the layer. The layer can be a thin film layer. An opening is etched in an interlayer insulator over a layer of semiconductor material, to expose a landing area on the layer of semiconductor material. The semiconductor material exposed by the opening is thickened by adding some of the semiconductor material within the opening. The process for adding the semiconductor material can include a blanket deposition, or a selective growth only within the landing area. A reaction precursor, such as a silicide precursor is deposited on the landing area in the opening. A reaction of the precursor with the semiconductor material in the opening is induced. An interlayer conductor is formed within the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact structure for thin film semiconductor","description":"A method is described for forming a circuit that comprises forming a layer of semiconductor material on the substrate and an interlayer conductor contacting the layer. The layer can be a thin film lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627498","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627498","citation_suggestion":"Patentable. \"Contact structure for thin film semiconductor\" (US-9627498). https://patentable.app/patents/US-9627498","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627498","json":"https://patentable.app/api/llm-context/US-9627498","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:05:05.303Z"}