{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627506","patent":{"patent_number":"US-9627506","title":"Method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-03-18T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device","description":"A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627506","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627506","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device\" (US-9627506). https://patentable.app/patents/US-9627506","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627506","json":"https://patentable.app/api/llm-context/US-9627506","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:38:28.642Z"}