{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627507","patent":{"patent_number":"US-9627507","title":"Strained asymmetric source/drain","assignee":null,"inventors":[],"filing_date":"2014-12-30T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconductor device includes receiving a substrate and forming a poly gate stack on the substrate. A dopant is implanted in the substrate at an implant angle ranging from about 10° to about 25° from perpendicular to the substrate. A spacer is formed adjacent the poly gate stack on the substrate. A source region and a drain region are etched in the substrate. A strained source layer and a strained drain layer are respectively deposited into the etched source and drain regions in the substrate, such that the source region and the drain region are asymmetric with respect to the poly gate stack. The poly gate stack is removed from the substrate and a high-k metal gate is formed using a gate-last process where the poly gate stack was removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Strained asymmetric source/drain","description":"The present disclosure provides a semiconductor device and methods of making wherein the semiconductor device has strained asymmetric source and drain regions. A method of fabricating the semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627507","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627507","citation_suggestion":"Patentable. \"Strained asymmetric source/drain\" (US-9627507). https://patentable.app/patents/US-9627507","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627507","json":"https://patentable.app/api/llm-context/US-9627507","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:29.594Z"}