{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627508","patent":{"patent_number":"US-9627508","title":"Replacement channel TFET","assignee":null,"inventors":[],"filing_date":"2015-04-14T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate and an intrinsic replacement channel. A tunneling field effect transistor (TFET) fin may be formed by the intrinsic replacement channel, a p-fin and an n-fin formed upon the substrate. The p-fin may serve as the source of the TFET and the n-fin may serve as the drain of the TFET. The replacement channel may be formed in place of a sacrificial channel of a diode fin that includes the p-fin, the n-fin, and the sacrificial channel at the p-fin and n-fin junction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Replacement channel TFET","description":"A semiconductor structure includes a substrate and an intrinsic replacement channel. A tunneling field effect transistor (TFET) fin may be formed by the intrinsic replacement channel, a p-fin and an n","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627508","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627508","citation_suggestion":"Patentable. \"Replacement channel TFET\" (US-9627508). https://patentable.app/patents/US-9627508","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627508","json":"https://patentable.app/api/llm-context/US-9627508","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:55:17.059Z"}