{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627514","patent":{"patent_number":"US-9627514","title":"Semiconductor device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-06-21T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device is provided as follows. Epitaxial layers is formed on an active fin structure of a substrate. First metal gate electrodes are formed on the active fin structure. Each first metal gate electrode and each epitaxial layer are alternately disposed in a first direction on the active fin structure. ILD patterns are formed on the epitaxial layers, extending in a second direction crossing the first direction. Sacrificial spacer patterns are formed on the first metal gate electrodes. Each of the plurality of sacrificial spacer patterns covers a corresponding first metal gate electrode of the first metal gate electrodes. Self-aligned contact holes and sacrificial spacers are formed by removing the ILD patterns. Each self-aligned contact hole exposes a corresponding epitaxial layer disposed under each ILD pattern. Source/drain electrodes are formed in the self-aligned contact holes. The sacrificial spacers are replaced with air spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of fabricating the same","description":"A method of fabricating a semiconductor device is provided as follows. Epitaxial layers is formed on an active fin structure of a substrate. First metal gate electrodes are formed on the active fin st","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627514","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627514","citation_suggestion":"Patentable. \"Semiconductor device and method of fabricating the same\" (US-9627514). https://patentable.app/patents/US-9627514","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627514","json":"https://patentable.app/api/llm-context/US-9627514","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:01.115Z"}