{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627517","patent":{"patent_number":"US-9627517","title":"Bipolar semiconductor switch and a manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2013-02-07T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type semiconductor region forming a first pn-junction with the first p-type semiconductor region and a second pn-junction with the second p-type semiconductor region. On a shortest path through the first n-type semiconductor region between the first pn-junction and the second pn-junction a concentration of charge recombination centers and a concentration of n-dopants vary. The concentration of the charge recombination centers has a maximum at a point along the shortest path where the concentration of n-dopants is at least close to a maximum dopant concentration. Further, a manufacturing method for the bipolar semiconductor switch is provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bipolar semiconductor switch and a manufacturing method therefor","description":"A bipolar semiconductor switch having a semiconductor body is provided. The semiconductor body includes a first p-type semiconductor region, a second p-type semiconductor region, and a first n-type se","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627517","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627517","citation_suggestion":"Patentable. \"Bipolar semiconductor switch and a manufacturing method therefor\" (US-9627517). https://patentable.app/patents/US-9627517","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627517","json":"https://patentable.app/api/llm-context/US-9627517","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:43:28.778Z"}