{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627531","patent":{"patent_number":"US-9627531","title":"Field-effect transistor with dual vertical gates","assignee":null,"inventors":[],"filing_date":"2015-10-30T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes an n-type vertical field-effect transistor (FET) that includes: a first source/drain feature disposed in a substrate; a first vertical bar structure that includes a first sidewall and a second sidewall disposed over the substrate; a gate disposed along the first sidewall of the first vertical bar structure; a second vertical bar structure electrically coupled to the first vertical bar structure; and a second source/drain feature disposed over the first vertical bar structure; and a p-type FET that includes; a third source/drain feature disposed in the substrate; a third vertical bar structure that includes a third sidewall and a fourth sidewall disposed over the substrate; the gate disposed along the third sidewall of the third vertical bar structure; a fourth vertical bar structure electrically coupled to the third vertical bar structure; and a fourth source/drain feature disposed over the third vertical bar structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field-effect transistor with dual vertical gates","description":"A semiconductor device includes an n-type vertical field-effect transistor (FET) that includes: a first source/drain feature disposed in a substrate; a first vertical bar structure that includes a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627531","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627531","citation_suggestion":"Patentable. \"Field-effect transistor with dual vertical gates\" (US-9627531). https://patentable.app/patents/US-9627531","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627531","json":"https://patentable.app/api/llm-context/US-9627531","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:43:56.120Z"}