{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627538","patent":{"patent_number":"US-9627538","title":"Fin field effect transistor and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-10-08T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":21,"abstract":"A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET includes a substrate having a top surface and an insulation. At least a recessed fin is extended upwardly from the top surface of the substrate, and at least a gate stack is formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack. The insulation includes a lateral portion adjacent to the recessed fin, and a central portion contiguous to the lateral portion, wherein a top surface of the lateral portion is higher than a top surface of the central portion. A top surface of the recessed fin is lower than the top surface of the central portion of the insulation."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor and method of manufacturing the same","description":"A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET includes a substrate having a top surface and an insulation. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627538","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627538","citation_suggestion":"Patentable. \"Fin field effect transistor and method of manufacturing the same\" (US-9627538). https://patentable.app/patents/US-9627538","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627538","json":"https://patentable.app/api/llm-context/US-9627538","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:42.432Z"}