{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9627581","patent":{"patent_number":"US-9627581","title":"Nitride semiconductor structure, electronic device including the nitride semiconductor structure, light-emitting device including the nitride semiconductor structure, and method for producing the nitride semiconductor structure","assignee":null,"inventors":[],"filing_date":"2015-05-27T00:00:00.000Z","publication_date":"2017-04-18T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A nitride semiconductor structure includes a nitride semiconductor layer having a principal plane and including a nitride semiconductor. The normal to the principal plane of the nitride semiconductor layer is inclined at 5 degrees or more and 17 degrees or less with respect to the [11-22] axis of the nitride semiconductor constituting the nitride semiconductor layer in the direction of the +c-axis of the nitride semiconductor. The nitride semiconductor structure may further include a substrate having a principal plane which supports the nitride semiconductor layer on the principal plane. The substrate may include any one selected from the group consisting of a nitride semiconductor, sapphire, and Si."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor structure, electronic device including the nitride semiconductor structure, light-emitting device including the nitride semiconductor structure, and method for producing the nitride semiconductor structure","description":"A nitride semiconductor structure includes a nitride semiconductor layer having a principal plane and including a nitride semiconductor. The normal to the principal plane of the nitride semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9627581","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9627581","citation_suggestion":"Patentable. \"Nitride semiconductor structure, electronic device including the nitride semiconductor structure, light-emitting device including the nitride semiconductor structure, and method for producing the nitride semiconductor structure\" (US-9627581). https://patentable.app/patents/US-9627581","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9627581","json":"https://patentable.app/api/llm-context/US-9627581","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:50.087Z"}