{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633840","patent":{"patent_number":"US-9633840","title":"Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-05-11T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A step of preparing a silicon carbide substrate (S11), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S12), and a step of forming a second silicon carbide semiconductor layer on the first silicon carbide semiconductor layer using a second source material gas (S13) are provided. In the step of forming a first silicon carbide semiconductor layer (S12) and the step of forming a second silicon carbide semiconductor layer (S13), ammonia gas is used as a dopant gas, and the first source material gas has a C/Si ratio of not less than 1.6 and not more than 2.2, the C/Si ratio being the number of carbon atoms to the number of silicon atoms."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device","description":"A step of preparing a silicon carbide substrate (S11), a step of forming a first silicon carbide semiconductor layer on the silicon carbide substrate using a first source material gas (S12), and a ste","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633840","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633840","citation_suggestion":"Patentable. \"Method of manufacturing silicon carbide semiconductor substrate and method of manufacturing silicon carbide semiconductor device\" (US-9633840). https://patentable.app/patents/US-9633840","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633840","json":"https://patentable.app/api/llm-context/US-9633840","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:44.331Z"}