{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633854","patent":{"patent_number":"US-9633854","title":"MOSFET and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2011-08-02T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer comprising a semiconductor substrate, a buried insulating layer, and a semiconductor layer, the buried insulating layer being disposed on the semiconductor substrate, and the semiconductor layer being disposed on the buried insulating layer; a gate stack disposed on the semiconductor layer; a source region and a drain region embedded in the semiconductor layer and disposed on both sides of the gate stack; and a channel region embedded in the semiconductor layer and sandwiched between the source region and the drain region, wherein the MOSFET further comprises a back gate and a counter doped region, and wherein the back gate is embedded in the semiconductor substrate, the counter doped region is disposed under the channel region and embedded in the back gate, and the back gate has a doping type opposite to that of the counter doped region. The MOSFET can adjust a threshold voltage by changing the doping type of the back gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"MOSFET and method for manufacturing the same","description":"The present disclosure discloses a MOSFET and a method for manufacturing the same, wherein the MOSFET comprises: an SOI wafer comprising a semiconductor substrate, a buried insulating layer, and a sem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633854","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633854","citation_suggestion":"Patentable. \"MOSFET and method for manufacturing the same\" (US-9633854). https://patentable.app/patents/US-9633854","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633854","json":"https://patentable.app/api/llm-context/US-9633854","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:32:27.384Z"}