{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633856","patent":{"patent_number":"US-9633856","title":"Method of forming a singe metal that performs N and P work functions in high-K/metal gate devices","assignee":null,"inventors":[],"filing_date":"2015-06-29T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate with a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a metal layer over the high-k dielectric layer, the metal layer having a first work function, protecting the metal layer in the first region, treating the metal layer in the second region with a de-coupled plasma that includes carbon and nitrogen, and forming a first gate structure in the first region and a second gate structure in the second region. The first gate structure includes the high-k dielectric layer and the untreated metal layer. The second gate structure includes the high-k dielectric layer and the treated metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a singe metal that performs N and P work functions in high-K/metal gate devices","description":"The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate with a first region and a second region, forming a high-k dielec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633856","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633856","citation_suggestion":"Patentable. \"Method of forming a singe metal that performs N and P work functions in high-K/metal gate devices\" (US-9633856). https://patentable.app/patents/US-9633856","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633856","json":"https://patentable.app/api/llm-context/US-9633856","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:23:46.006Z"}