{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633857","patent":{"patent_number":"US-9633857","title":"Semiconductor structure including a trench capping layer and method for the formation thereof","assignee":null,"inventors":[],"filing_date":"2016-03-31T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A semiconductor structure includes a trench isolation structure, a trench capping layer, a gate structure and a sidewall spacer. The trench isolation structure includes a first electrically insulating material. The trench capping layer is provided over the trench isolation structure. The trench capping layer includes a second electrically insulating material that is different from the first electrically insulating material. The gate structure includes a gate insulation layer including a high-k material and a gate electrode over the gate insulation layer. The gate structure has a first portion over the trench capping layer. The sidewall spacer is provided adjacent the gate structure. A portion of the sidewall spacer is provided on the trench capping layer and contacts the trench capping layer laterally of the gate insulation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure including a trench capping layer and method for the formation thereof","description":"A semiconductor structure includes a trench isolation structure, a trench capping layer, a gate structure and a sidewall spacer. The trench isolation structure includes a first electrically insulating","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633857","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633857","citation_suggestion":"Patentable. \"Semiconductor structure including a trench capping layer and method for the formation thereof\" (US-9633857). https://patentable.app/patents/US-9633857","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633857","json":"https://patentable.app/api/llm-context/US-9633857","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:20.321Z"}