{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633858","patent":{"patent_number":"US-9633858","title":"Methods for forming semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-30T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A method for forming a semiconductor device includes forming first and second hard mask layers overlying a semiconductor substrate and forming trenches through the second hard mask, the first hard mask, and into the substrate. A dielectric material is formed in the trenches to form shallow trench isolation regions, removing the second hard mask layer, and a floating gate material is formed overlying the first hard mask and the trenches. The method further includes repeating at least twice a process of forming a buffer layer over the floating gate material and using a polishing process to remove a portion of the buffer layer and a top portion of the floating gate material. Next, a dry etch process to remove a portion of the floating gate material above the shallow trench isolation regions and the remaining portions of the buffer layer to form floating gate structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming semiconductor device","description":"A method for forming a semiconductor device includes forming first and second hard mask layers overlying a semiconductor substrate and forming trenches through the second hard mask, the first hard mas","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633858","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633858","citation_suggestion":"Patentable. \"Methods for forming semiconductor device\" (US-9633858). https://patentable.app/patents/US-9633858","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633858","json":"https://patentable.app/api/llm-context/US-9633858","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:18:01.159Z"}