{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633864","patent":{"patent_number":"US-9633864","title":"Etching method","assignee":null,"inventors":[],"filing_date":"2016-01-14T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"There is provided a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the second region formed to have a recess, the first region provided to fill the recess and to cover the second region, and a mask provided on the first region. The method includes: (a) generating a plasma of a processing gas containing a fluorocarbon gas in a processing chamber where the target object is accommodated and forming a deposit containing fluorocarbon on the target object; (b) generating a plasma of a processing gas containing an oxygen-containing gas and an inert gas in the processing chamber; and (c) etching the first region by radicals of fluorocarbon contained in the deposit. A sequence including the step (a), the step (b) and the step (c) is repeatedly performed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Etching method","description":"There is provided a method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633864","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633864","citation_suggestion":"Patentable. \"Etching method\" (US-9633864). https://patentable.app/patents/US-9633864","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633864","json":"https://patentable.app/api/llm-context/US-9633864","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:17:19.902Z"}