{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633896","patent":{"patent_number":"US-9633896","title":"Methods for formation of low-k aluminum-containing etch stop films","assignee":null,"inventors":[],"filing_date":"2015-11-23T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for formation of low-k aluminum-containing etch stop films","description":"Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633896","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633896","citation_suggestion":"Patentable. \"Methods for formation of low-k aluminum-containing etch stop films\" (US-9633896). https://patentable.app/patents/US-9633896","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633896","json":"https://patentable.app/api/llm-context/US-9633896","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:34:34.722Z"}