{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633902","patent":{"patent_number":"US-9633902","title":"Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching","assignee":null,"inventors":[],"filing_date":"2015-09-02T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"According to an embodiment, a method for manufacturing a semiconductor device includes: selectively forming a plurality of mask layers on a first surface of a semiconductor substrate, and the semiconductor substrate having the first surface and a second surface; dividing the semiconductor substrate by forming a gap piercing from the first surface to the second surface of the semiconductor substrate, the gap being formed by dry-etching the first surface of the semiconductor substrate exposed between the plurality of mask layers, and a width of the gap on the second surface side being larger than a width of the gap on the first surface side; and forming a first electrode under a reduced-pressure atmosphere on the first surface of the semiconductor substrate after the semiconductor substrate being divided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching","description":"According to an embodiment, a method for manufacturing a semiconductor device includes: selectively forming a plurality of mask layers on a first surface of a semiconductor substrate, and the semicond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633902","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device that includes dividing semiconductor substrate by dry etching\" (US-9633902). https://patentable.app/patents/US-9633902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633902","json":"https://patentable.app/api/llm-context/US-9633902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:20.517Z"}