{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633904","patent":{"patent_number":"US-9633904","title":"Method for manufacturing semiconductor device with epitaxial structure","assignee":null,"inventors":[],"filing_date":"2016-11-15T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a semiconductor device with epitaxial structure includes following steps: A substrate including a plurality of gate structures formed thereon is provided, and a spacer is respectively formed on sidewalls of each gate structure. Next, a first etching process is performed to form a first recess respectively at two sides of the gate structures and followed by performing an ion implantation to the first recesses. After the ion implantation, a second etching process is performed to widen the first recesses to form widened first recesses and to form a second recess respectively at a bottom of each widened first recess. Then, an epitaxial structure is respectively formed in the widened first recesses and the second recesses."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device with epitaxial structure","description":"A method for manufacturing a semiconductor device with epitaxial structure includes following steps: A substrate including a plurality of gate structures formed thereon is provided, and a spacer is re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633904","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633904","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device with epitaxial structure\" (US-9633904). https://patentable.app/patents/US-9633904","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633904","json":"https://patentable.app/api/llm-context/US-9633904","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:45.024Z"}