{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633912","patent":{"patent_number":"US-9633912","title":"Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET","assignee":null,"inventors":[],"filing_date":"2016-04-20T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method includes providing a substrate that underlies a layer of SiGe; forming a plurality of fins in the layer of SiGe. Each formed fin has a fin shape and fin location preserving hard mask layer on a top surface. The method also includes depositing Si on a first subset of the set of fins in what will be an nFET area; performing a Si—Ge inter-mixing process on the first subset of fins to reduce a concentration of Ge in the first subset while producing a Si—Ge intermix layer; removing the Si—Ge intermix layer leaving the first subset of fins having the reduced concentration of Ge, and forming a second subset of fins in what will be a pFET area. The second subset is also formed from the layer of SiGe and has a greater percentage of Ge than a percentage of Ge in the first subset of fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET","description":"A method includes providing a substrate that underlies a layer of SiGe; forming a plurality of fins in the layer of SiGe. Each formed fin has a fin shape and fin location preserving hard mask layer on","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633912","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633912","citation_suggestion":"Patentable. \"Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET\" (US-9633912). https://patentable.app/patents/US-9633912","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633912","json":"https://patentable.app/api/llm-context/US-9633912","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:16:51.640Z"}