{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633917","patent":{"patent_number":"US-9633917","title":"Three dimensional integrated circuit structure and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-08-20T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Provided is a three dimensional integrated circuit structure including a first die, a through substrate via and a connector. The first die is bonded to a second die with a first dielectric layer of the first die and a second dielectric layer of the second die, wherein a first passivation layer is between the first dielectric layer and a first substrate of the first die, and a first test pad is embedded in the first passivation layer. The through substrate via penetrates through the first die and is electrically connected to the second die. The connector is electrically connected to the first die and the second die through the through substrate via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional integrated circuit structure and method of manufacturing the same","description":"Provided is a three dimensional integrated circuit structure including a first die, a through substrate via and a connector. The first die is bonded to a second die with a first dielectric layer of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633917","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633917","citation_suggestion":"Patentable. \"Three dimensional integrated circuit structure and method of manufacturing the same\" (US-9633917). https://patentable.app/patents/US-9633917","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633917","json":"https://patentable.app/api/llm-context/US-9633917","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:06.738Z"}